Processing Stability of Monolayer WS2 on SiO2

Abstract Using internal photoemission of electrons, the energy position valence band top edge in 1 monolayer WS 2 films on SiO thermally-grown Si was monitored to evaluate stability layer with respect two critically important technological factors: exposure air and transfer from growth substrate (sapphire) onto . Contrary previous results obtained for MoS layers synthesized by metal film thermal sulfurization H S, metal-organic chemical vapor deposition grown is found remain at 3.7 ± 0.1 eV below conduction bottom through different runs, processing, storage several months. This exceptional indicates as a viable candidate wafer-scale technology implementation.